US Patent Issued to Semileds Optoelectronics on Feb. 26 for "Vertical Light Emitting Diode Having an Outwardly Disposed Electrode" (Taiwanese Inventors) 02/28/2013
ALEXANDRIA, Va., Feb. 27 -- United States Patent no.
8,384,088, issued on Feb. 26, was assigned to Semileds
Optoelectronics Co. Ltd. (Taiwan).
"Vertical Light Emitting Diode Having an Outwardly Disposed
Electrode" was invented by Chen#$%$ Chu (Hsinchu, Taiwan), Wen-Huang Liu (Hsinchu, Taiwan) and Hao-Chun Cheng
(Hsinchu, Taiwan). According to the abstract released by the
U.S. Patent & Trademark Office: "The invention relates to a vertical light emitting diode (VLED) having an outwardly
disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the
periphery of the semiconductor epitaxial structure, and a
conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure." The patent was filed on Nov. 4, 2010, under Application No. 12/939,984