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GigOptix, Inc. Message Board

  • stocksith stocksith Jan 2, 2014 9:39 AM Flag

    New paper posted link on market pulse stocktwits

    GIG is included in the group know as "the gorilla in the room!"

    We discuss electro-optic modulators (up to 64QAM at a data rate 150 Gbit/s), waveguides for efficient sum and difference frequency generation, comb line generation with a Kerrnonlinear ring resonator, and a surface plasmon polariton modulator.

    Nonlinear effects support a large variety of methods for processing optical signals near wavelengths of 1.55 μm. Especially the silicon-on-insulator (SOI) platform — typically a 220 nm thin Si slab with refractive index nSi  3.5 on top of a thick SiO2 layer residing on a Si substrate — allows strong field confinement in high index-contrast nano-scaled waveguides (WG). However, Si lacks a (2)-nonlinearity, while its high (3)-nonlinearity is impeded by two-photon absorption (TPA) and free-carrier absorption (FCA). The addition of organic materials (silicon-organic hybrid, SOH) provides what silicon has not: A (2)-nonlinearity, and a (3)-nonlinearity without TPA and FCA. Also GaAs as a material platform is an option. Alternatively, if the photonic Si layer of the SOI stack is replaced by silicon nitride (SiN) with nSiN  2, the guided fields do not suffer from TPA for  600 nm, and FCA has no impact in this dielectric. A different approach for electro-optic modulators is to combine Si waveguiding with plasmonic structures.Choosing from a multitude of nonlinear nano-photonic devices, we discuss a WG for efficient (2)-nonlinear frequency generation, present results for (2)-nonlinear high-speed SOH and GaAs modulators, illustrate the capabilities of a plasmonic modulator, and demonstrate comb line generation with a (3)-nonlinear SiN ring resonator.

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    • 2. SOH double slot waveguide for x(2)-nonlinear frequency generation
      With a linear electro-optic coefficient of 230 pm/V for the organic cladding

      3. Modulators
      With a driving voltage of 5 Vpp, the modulator consumes 620 fJ/bit, which could be as low as 320 fJ/bit [4] for on-off keying at 10 Gbit/s.

      Using GaAs as the electro-optic material, an IQ modulator for the formats 4QAM, 16QAM, 32QAM and 64QAM IQ was demonstrated to have a single-polarization bit rate of up to 150 Gbit/s

      4. Comb line generation in a x(3)-nonlinear ring resonator
      Using QPSK and 16QAM modulation formats, an aggregate data rate of 392 Gbit/s is transmitted on 6 neighbouring comb lines

      Check out the players involved here.

      1Institute of Photonics and Quantum Electronics (IPQ-KIT), Karlsruhe Institute of Technology (KIT), 76131 Karlsruhe, Germany
      2Institute of Microstructure Technology (IMT-KIT) – 3Now with Swiss Federal Institute of Technology (ETH), Zürich, Switzerland
      4GigOptix Inc., Switzerland and GigOptix Bothell, Washington, USA – 5AMO, Aachen, Germany
      6Institute of Nanotechnology (INT-KIT) – 7Institute of Applied Physics (IAP-KIT) – 8Institute of Applied Materials (IAM-AWP-KIT)
      9Photon. Res. Group, Ghent Univ. – IMEC, Dpt. of Informat. Technol. (INTEC) & Center of Nano- and Biophoton. (NB-Photon.), Gent, Belgium
      10Ecole Polytech. Federale de Lausanne (EPFL) – 11MPQ Garching, Germany – 12Menlo Systems, Martingsried, Germany
      13Joint Lab Silicon Photonics HFT4, Technische Universität Berlin, Germany – 14u2t Photonics, Sedgefield, UK
      15Constelex Technology Enablers, Corallia Microelectronics Innovation Center, Athens, Greece
      16IHP Frankfurt (Oder), Germany – 17Athens Information Technology Center, Athens, Greece

 
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