GIG is included in the group know as "the gorilla in the room!"
We discuss electro-optic modulators (up to 64QAM at a data rate 150 Gbit/s), waveguides for efficient sum and difference frequency generation, comb line generation with a Kerrnonlinear ring resonator, and a surface plasmon polariton modulator.
Nonlinear effects support a large variety of methods for processing optical signals near wavelengths of 1.55 μm. Especially the silicon-on-insulator (SOI) platform — typically a 220 nm thin Si slab with refractive index nSi 3.5 on top of a thick SiO2 layer residing on a Si substrate — allows strong field confinement in high index-contrast nano-scaled waveguides (WG). However, Si lacks a (2)-nonlinearity, while its high (3)-nonlinearity is impeded by two-photon absorption (TPA) and free-carrier absorption (FCA). The addition of organic materials (silicon-organic hybrid, SOH) provides what silicon has not: A (2)-nonlinearity, and a (3)-nonlinearity without TPA and FCA. Also GaAs as a material platform is an option. Alternatively, if the photonic Si layer of the SOI stack is replaced by silicon nitride (SiN) with nSiN 2, the guided fields do not suffer from TPA for 600 nm, and FCA has no impact in this dielectric. A different approach for electro-optic modulators is to combine Si waveguiding with plasmonic structures.Choosing from a multitude of nonlinear nano-photonic devices, we discuss a WG for efficient (2)-nonlinear frequency generation, present results for (2)-nonlinear high-speed SOH and GaAs modulators, illustrate the capabilities of a plasmonic modulator, and demonstrate comb line generation with a (3)-nonlinear SiN ring resonator.
With it involving the GIG engineers located in Switzerland and Washington state it shows the engineers are collaborating and conducting scientific operations being published.............I understood every sentence of the published paper........... yeah right. - Profit