Morris Chang finally announced that TSMC will offer FinFets at 20nm. TSMC has been working with FinFets for 10+ years and today has 20nm FinFet silicon (SRAM).
Thank you Intel for creating customer demand for this disruptive technology, could not have done it without you!
Here is the lady from TSMC.
If you can read with the understanding of a 12 year old, I am quite cnfident you will be able to read this.
"Now FinFET for significant performance case, we’re going to introduce FinFET after the 20-nanometer planar."
That is when the company get to .14.
That will be in late 2014 or earlt 2015. That is three years from now and by then, Intel will have already released the .10 chips and other goodies.
Of course, Apple cannot wait until late 2014 and so there is the problem for Intel haters. Apple will go to Intel next year sometime in phones and tablets.
It seems you speak with a very forked tongue !!
'Turning to 20-nanometer, the development is on track with very good yield on SRAM. Compared with 28-nanometer, 20-nanometer is 1.9 times the density and has significant performance improvement in both speed and power. We have engaged with more first wave customers than even the 28-nanometer. If you recall, a year or two ago, I told you that we were very pleased with the number of engagements on the 28-nanometer. Now this time on the 20-nanometer we’re engaged with even more customers than in the 28-nanometer.
Also, this early engagement with a large number of customers on 20-nanometer means earlier collaboration so that when the ramp-up stops, it will be faster and smoother. We plan to roll out 20-nanometer at the end of this year.
Now FinFET for significant performance case, we’re going to introduce FinFET after the 20-nanometer planar. We’ve been working on FinFET for more than 10 years. We’re quite confident that we will have a robust FinFET technology.'
The TAITRA report cited an anonymous source within TSMC saying that TSMC's schedule for 3-D chip rollout matched that of Intel, which has said it expects its tri-gate devices to be ready for volume production by the end of the year. The report did not get into the specifics of the TSMC 3-D technology, instead using language similar to that which Intel used during the tri-gate launch in May to describe 3-D chips in general.
TSMC is developing its own 3-D transistor technology, known as FinFET, which is similar to Intel's tri-gates. But TSMC said as recently as February that it does not expect to put FinFET devices into production until 2015 or 2016. In other words, it's highly unlikely that TAITRA's anonymous TSMC source was referring to TSMC's FinFET technology being in volume production by the end of this year (which would have made it more of an apples to apples comparison).
saying that TSMC's schedule for 3-D chip rollout matched that of Intel, which has said it expects its tri-gate devices to be ready for volume production by the end of the year. The report did not get into the specifics of the TSMC 3-D technology, instead using language similar to that which Intel used during the tri-gate launch in May to describe 3-D chips in general.
Who posted that? Nenni
LOL someone is confusing TSV with FinFet BIG time - actuall EE published it some time ago and they looked real stupid...
TSV is also 3D but has absolutely nothing to do with Fin Fet
Nice technical link by ChipGuy ( Paul DeMone ?) but it doesn't say anything about TSMC 20nm FinFETs in it. Do you actually have a *real* *official* link for that and not just your usual wishful thinking ?