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  • theoz_97 theoz_97 Feb 28, 2008 3:38 PM Flag

    Freescale Pushing MRAM Technology Toward Automotive Goal

    "David Lammers, News Editor -- Semiconductor International, 2/28/2008 7:41:00 AM
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    Freescale Semiconductor Inc. (Austin, Texas) is continuing its push to bring magneto-resistive random access memory (MRAM) technology to the marketplace, emphasizing the reliability of the new memory technology.

    Freescale’s 4 Mb MRAM has much higher soft error rate (SER) immunity than conventional SRAMs, with a failure in time (FIT) rate of one soft error in 107 device hours, said MRAM marketing manager David Bondurant.

    Freescale’s goal is to introduce MRAM to its lineup of automotive controllers. To that end, the company is developing a 16 Mb MRAM based on 130 nm design rules, and will port its MRAM technology to the company’s automotive-grade 130 nm process, SMOS 10. Also, the company is working to combine MRAM — which Bondurant said is "basically a magnetometer" at heart — with sensors, including accelerometers.'

    More...

    http://www.semiconductor.net/article/CA6536292.html

    oz

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