Huh? Soraa's entire product line is MR 16 replacements which is a tiny fraction of the market. Cree is agnostic on substrates so if GaN on GaN is better than GaN on SiC, that's what they will do...and they could buy Soraa with a rounding error to their balance sheet if they so desired...
When will bulk GaN be price-competitive with silicon?
By James Montgomery
November 12, 2012 - Wide bandgap semiconductor materials such as gallium nitride can significantly outperform traditional silicon-based devices in power electronics and light-emitting diodes (LEDs). On the other hand, they're also vastly more expensive ($1900 for a 2-in. bulk GaN substrate, vs. $25-$50 for a 6-in. Si substrate), and silicon has the advantage of being easily integrated into volume manufacturing. So where's the midpoint where GaN's capabilities and extra costs align to make it the technology of choice, and for which application?
"The future of bulk GaN is going to come down to how it faces off against silicon substrates," stated Pallavi Madakasira, Lux Research analyst and the lead author of a new report which breaks down the manufacturing costs for ammonothermal and hydride vapor phase epitaxy (HVPE) processes for making bulk GaN, as well as for GaN epitaxy on both silicon and GaN substrates, and determined where the price/performance trade-off will land. "Bulk GaN wins in laser diodes and it can become relevant in LEDs and power electronics by boosting yield and performance."