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Cree, Inc. Message Board

  • oracleofny oracleofny Jun 3, 2013 10:34 AM Flag

    Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure

    Cree Ships Over Two Million GaN HEMT Devices for Telecom Infrastructure
    9:00a ET June 3, 2013 (Business Wire)

    Cree, Inc. (Nasdaq: CREE) reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming more widespread, telecommunications companies are looking for innovative technologies to improve channel capacity and speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers. The use of GaN HEMT in transmitter amplifiers is gaining attention in the cellular telecommunications industry due to the ability to decrease power consumption and size, and increase bandwidth capabilities.

    The world's mobile networks are reported to consume about 120TWh of electricity per year (for an average cost of US$14.4 billion), and 50 percent of the networks power is consumed by power amplifiers and associated components. Consequently, improved power amplifier efficiency can result in considerable energy savings.

    "Wireless telecommunication leaders are leveraging the performance advantages of Cree's GaN HEMTs," said Tom Dekker, director sales and marketing, Cree RF Business Unit. "We are very pleased we achieved our two millionth GaN HEMT cellular telecom shipment milestone. GaN HEMT prices have greatly improved and are now a viable alternative to Si LDMOS transistors for cellular telecom amplifiers. We target continued growth of our telecommunication volumes."

    The next-generation performance enabled by Cree GaN HEMT are required to support today's 4G LTE cellular networks, as well as to help drive LTE release 10 and advanced LTE networks currently being developed. The superior efficiency and bandwidth advantages of GaN HEMTs help LTE cellular network tran

    Sentiment: Strong Buy

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