B. Flash drives have a problem with charge leakage at gates which gets worst as you scale the technology to the next node:
"The deterioration is less a problem in SLC flash than it is in MLC flash. In SLC flash, there's only one manufacturer-set threshold value, so the likelihood of a problem is lower. The number of electrons controls the switch-on voltage of the floating gate, and the voltage will either be above the threshold point or below it.
With MLC flash, the manufacturer can set multiple threshold values. As the oxide layer deteriorates, those values can shift across the pre-set threshold points and become difficult to discern, leading to errors.
Both single-level cell and multi-level cell flash rely on error-correction algorithms to ensure the data remains intact, but eventually, NAND flash SSDs wear out. The wear-out figures typically used by the industry are 100,000 program/erase or endurance cycles for single-level cell flash and 10,000 cycles for multi-level cell flash, but those figures vary widely by manufacturer
Michael Cornwell, lead technologist for flash memory at Sun Microsystems Inc., claimed the MLC endurance cycle figure has been worsening to a figure closer to 3,000 program/erase cycles. He said as flash dies get smaller, fewer electrons fit on the floating gate. That trend, coupled with the natural tendency of electrons to escape, will lead to the use of more sophisticated data correction.
It would seem that the market which actually is buying 6-12 months ahead or more, doesn't agree with you.People posting here aren't really the money moving this and you and I both know it.My guess you are a well educated amature short, headed for a very gloomy xmas. So let me wish you a merry christmas.