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Mellanox Technologies, Ltd. (MLNX) Message Board

stocksith 14 posts  |  Last Activity: Jun 23, 2014 10:18 PM Member since: Jan 8, 2010
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  • stocksith stocksith Jun 23, 2014 10:18 PM Flag

    signed a definitive agreement to acquire for cash only, by way of assuming specified liabilities,

    Beam Direct
    GPS and sats
    Foot in door at NASA and SBIR (grant money)

  • stocksith by stocksith Jun 20, 2014 4:56 PM Flag

    Development of Novel Phase Shifterless RF Phase Array Antenna Systems

    Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-on-Chip (SoC) Applications on Silicon on Sapphire (SOS) Substrates

    Broadband Quadrature Mixers and I/Q Mismatch Reduction

    Miniaturized Radiation Hardened Beam-Steerable GPS Receiver Front End

    Development of Novel Phase Shifterless RF Phase Array Antenna Systems

    Low-noise amplifier (LNA) and Power amplifier (PA) for Radio-Frequency (RF) System-onChip (SoC) Applications on Silicon on Sapphire (SOS) Substrates

    Miniaturized Radiation Hardened Beam-Steerable GPS Receiver Front End

    SBIR Phase I $297,302.00 3
    SBIR Phase II $1,498,286.00 2
    STTR Phase I $69,823.00 1
    STTR Phase II $499,958.00 1

  • stocksith by stocksith Jun 20, 2014 4:47 PM Flag

    Auburn-based Tahoe RF Semiconductor Inc. announced this week it was awarded a Small Business Innovation Research grant by the NASA Goddard Space Flight Center in Greenbelt, Md., to develop a miniaturized chip for spacecraft.

    The chip will allow improved signal sensitivity to track craft above space-based global positioning system navigation systems. Most GPS is used to make earth-bound measurements. The new chip will allow NASA to more precisely track items in orbit, both in geostationary earth orbits and in highly elliptical orbits.
    "Tahoe RF continues to demonstrate its leadership role in the development of next generation GNSS systems and technologies. In this innovative product, Tahoe RF has combined its two core strengths -- proven GPS design expertise and ability to support beam steering and beam forming in the RF IC. Tahoe RF is looking forward to transition this product into the upcoming NASA missions," Tahoe RF CEO Irshad Rasheed said in a statement.

    The core team at Tahoe RF boasts some of the innovators of Radio Frequency Integrated Circuit technology. That technology enables the existence of multiple products, from Bluetooth headsets to global positioning systems.

    The technology is vital to guidance, positioning and security systems, which is especially significant to the military and NASA.

    The 2002 startup provides components which that can withstand radiation of being in orbit.

    Tahoe RF engineers custom design devices that use state-of-the-art, radio-on-a-chip architecture.

  • Reply to

    Another Acquisition!

    by dogpal2 Jun 19, 2014 9:09 AM
    stocksith stocksith Jun 19, 2014 11:10 AM Flag

    Wasn't the cut mainly offloading the TFPS R&D to BrP?

  • Reply to

    Another Acquisition!

    by dogpal2 Jun 19, 2014 9:09 AM
    stocksith stocksith Jun 19, 2014 9:32 AM Flag

    TRF has GPS portfolio which could send some of GIG's existing products into new markets.

  • Reply to

    Another Acquisition!

    by dogpal2 Jun 19, 2014 9:09 AM
    stocksith stocksith Jun 19, 2014 9:28 AM Flag

    TRF should have very little debt if any. Avi probably paid pennies for this one. Not much there.

  • Reply to

    Another Acquisition!

    by dogpal2 Jun 19, 2014 9:09 AM
    stocksith stocksith Jun 19, 2014 9:26 AM Flag

    Huge IBM connection at Tahoe RF. GIG is also licensing tech from IBM. TRF has a technology called BeamDirect for PTP. Another piece of the puzzle.

  • Reply to

    SOFI has a new Paper Out

    by aggies Jun 18, 2014 3:46 PM
    stocksith stocksith Jun 18, 2014 4:33 PM Flag

    Electro-optic modulation at frequencies of 100 GHz and beyond is important for photonic-electronic signal processing at the highest speeds. To date, however, only a small number of devices exist that can operate up to this frequency. In this study, we demonstrate that this frequency range can be addressed by nanophotonic, silicon-based modulators. We exploit the ultrafast Pockels effect by using the silicon–organic hybrid (SOH) platform, which combines highly nonlinear organic molecules with silicon waveguides. Until now, the bandwidth of these devices was limited by the losses of the radiofrequency (RF) signal and the RC (resistor-capacitor) time constant of the silicon structure. The RF losses are overcome by using a device as short as 500 µm, and the RC time constant is decreased by using a highly conductive electron accumulation layer and an improved gate insulator. Using this method, we demonstrate for the first time an integrated silicon modulator with a 3dB bandwidth at an operating frequency beyond 100 GHz. Our results clearly indicate that the RC time constant is not a fundamental speed limitation of SOH devices at these frequencies. Our device has a voltage–length product of only VπL=11 V mm, which compares favorably with the best silicon-photonic modulators available today. Using cladding materials with stronger nonlinearities, the voltage–length product is expected to improve by more than an order of magnitude.

  • Reply to

    SOFI has a new Paper Out

    by aggies Jun 18, 2014 3:46 PM
    stocksith stocksith Jun 18, 2014 4:30 PM Flag

    In this study, we demonstrate for the first time an integrated, silicon electro-optic modulator with a 3-dB bandwidth larger than 100 GHz. The device has a voltage–length product of VπL=11 V mm, which is the smallest reported value to date for a high-speed silicon-based modulator. Our modulator exploits the linear Pockels effect, offers capacitances per device length as small as 100 fF mm−1, 13 and has a parasitic resistance of several GΩ.

  • Reply to

    SOFI has a new Paper Out

    by aggies Jun 18, 2014 3:46 PM
    stocksith stocksith Jun 18, 2014 4:29 PM Flag

    The optically nonlinear polymer M3 (commercialized by Gigoptix, see Ref. 19) was spin-coated at 3000 r.p.m. for 30 s and poled at 167 °C for 3 s in a high vacuum (10−4 mbar), thereby obtaining an electro-optic coefficient of r33=18 pm V−1, which corresponds to a π-voltage of Vπ=22 V. The material M3 has been successfully tested by Telcordia.20 The fiber-to-fiber insertion loss of the device was (21±2) dB, 10 dB of which are attributed to the couplers21 and 11 dB to the remaining 2.6-mm-long waveguide, which is comprised of tapers, strip-to-slot converters22 and the strip-load slot waveguide. By comparing the loss of the waveguides on the same chip having different device lengths (cut-back method), we estimate the insertion loss of of the 500-µm-long device to be less than 2 dB. Activating the gate field increases the fiber-to-fiber insertion loss by (3±1) dB. This corresponds to an additional ~0.5 dB for the 500-µm-long device (assuming that the excess loss is constant along the optical waveguide).

  • Reply to

    SOFI has a new Paper Out

    by aggies Jun 18, 2014 3:46 PM
    stocksith stocksith Jun 18, 2014 4:26 PM Flag

    With an earlier device generation,15 which had a similar π-voltage but a smaller bandwidth, we previously demonstrated a 42.7 Gbit s−1 data transmission rate with a bit error ratio of less than 3×10−10. The current device is expected to support on–off-keying data rates of up to 140 Gbit s−1. Furthermore, the half-wave voltage of Vπ=22 V can be reduced by a factor of 10 in future device generations as we recently demonstrated.

  • Reply to

    SOFI has a new Paper Out

    by aggies Jun 18, 2014 3:46 PM
    stocksith stocksith Jun 18, 2014 4:23 PM Flag

    I think I found it. Here is the conclusion.

    We have demonstrated the first silicon hybrid phase modulator with a 3-dB bandwidth of at least 100 GHz. Using a gate voltage, we created an accumulation layer to reduce the resistance of the connecting silicon region between the electrodes and the optically active region. This reduces the RC time constant to a value where it does not limit the device’s bandwidth. Our device is very short (500 µm) and has a voltage–length product as low as VπL=11 V mm, a value which strongly competes with state-of-the-art, high-speed silicon modulators. The use of materials with a stronger nonlinearity can further improve this value by an order of magnitude.

  • Striking deals or just ogling the pigmented ladies and partying on the shareholders dime?

  • GigOptix (NYSE:GIG) was the recipient of a significant decline in short interest in May. As of May 30th, there was short interest totalling 111,275 shares, a decline of 36.4% from the May 15th total of 174,991 shares, Analyst RN reports. Currently, 0.4% of the shares of the stock are short sold. Based on an average trading volume of 135,067 shares, the days-to-cover ratio is currently 0.8 days.

    GIG has been the subject of a number of recent research reports. Analysts at Sidoti initiated coverage on shares of GigOptix in a research note on Thursday, April 10th. They set a “neutral” rating on the stock. Two analysts have rated the stock with a hold rating and three have issued a buy rating to the stock. The stock presently has a consensus rating of “Buy”.

    Shares of GigOptix (NYSE:GIG) opened at 1.44 on Thursday. GigOptix has a one year low of $0.90 and a one year high of $1.98. The stock has a 50-day moving average of $1.45 and a 200-day moving average of $1.59. The company’s market cap is $45.3 million.

    GigOptix (NYSE:GIG) last announced its earnings results on Thursday, May 1st. The company reported ($0.02) earnings per share for the quarter, beating the analysts’ consensus estimate of ($0.03) by $0.01. On average, analysts predict that GigOptix will post $-0.01 earnings per share for the current fiscal year.

    GigOptix, Inc (NYSE:GIG) is a supplier of semiconductor and electro-optical component products that enables high-speed end to end data streaming over optical fiber and wireless telecommunications and data-communications networks globally.

MLNX
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