TriQuint Semiconductor, Inc.'s (TQNT) gallium nitride (GaN) power transistors were recently selected by global microwave products manufacturer RF-Lambda to develop a new range of high power amplifiers.
TriQuint’s new GaN high electron mobility transistor (:HEMT) devices are more efficient and suitable for high drain voltage operating conditions. These transistors can lower part counts, reduce board space and trim down overall system costs. GaN RF Power Transistor offers greater power efficiency and reduces the number of transistors in a design, largely benefiting from heat management.
TriQuint’s GaN devices power amplifiers for defense, industrial, aerospace and commercial applications. With increasing usage of GaN transistors in defense as well as commercial communications companies, TriQuint is looking to expand its presence in these sectors to further augment its revenue.
TriQuint is one of the leading players in the semiconductor market and new applications are further creating a lucrative growth opportunity for it. TriQuint GaN products are more competitive and offer size, weight and power advantages in comparison to other products available in the market. Market researcher Strategy Analytics anticipates that the market for GaN microelectronic devices would increase by 34% annually, reaching approximately $186 million by 2015.
Headquartered in Hillsboro, Ore., TriQuint manufactures semiconductors for the wireless handset segment, infrastructure networks, and defense markets. TriQuint products reduce costs and increase the performance of connected mobile devices and networks that deliver critical voice, data and video communications.
Triquint currently has a Zacks Rank #3 (Hold). Other stocks that look promising and are worth a look in the industry include Marvell Technology Group Ltd (MRVL), NeoPhotonics Corporation (NPTN ) and PMC-Sierra Inc. (PMCS), each carrying a Zacks Rank #2 (Buy).
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