New Vishay Siliconix Power MOSFETs Offer Industry-Low On-Resistance Down to 43 Milliohms at 4.5 V in Industry's Smallest Chipscale MICRO FOOT(R) 0.8 mm by 0.8 mm Package

Marketwired

MALVERN, PA--(Marketwire - Nov 29, 2012) - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced new 12 V and 20 V n-channel and p-channel TrenchFET® power MOSFETs with the industry's lowest on-resistance in the industry's smallest CSP form factor: the 0.8 mm by 0.8 by 0.4 mm MICRO FOOT® package.

The devices released today will be used for battery or load switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices. The MOSFETs' compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted undervoltage lockout.

For the first time in this form factor, the MOSFETs are built on an ultra-high-density technology that uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. When combined with MICRO FOOT's packageless CSP technology, this provides the lowest on-resistance possible for a given outline area.

For n-channel devices, the result is a 43 milliohms maximum on-resistance at a 4.5 V gate drive for the 12 V Si8806DB. When a 20 V rating is needed, the Si8812DB offers a maximum on-resistance of 59 milliohms. The n-channel devices are optimal for high-speed switching applications with fast turn-on/off times of less than 100 ns, such as DC/DC boost converter applications.

The -20 V p-channel Si8817DB and Si8489EDB are optimized for buck converter applications. With 76 milliohms maximum on-resistance at a 4.5 V gate drive, the smaller 0.8 mm by 0.8 by 0.4 mm Si8817DB will be used for applications where space is even more critical than on-resistance. The 1 mm by 1 mm Si8489EDB will be used when the lower maximum on-resistance of 54 milliohms at 4.5 V is more critical.

The Si8489EDB is the first p-channel Gen III device in the 1 mm by 1 mm form factor, and it provides 2500 V typical ESD protection. In addition, the Si8817DB offers on-resistance ratings down to 1.5 V, allowing the device to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry.

The devices are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition.

The Si8806DB, Si8812DB, Si8817DB and Si8489EDB are the latest expansion to the MICRO FOOT family, which can be found at http://www.vishay.com/mosfets/micro-foot-package/.

Samples and production quantities of the new TrenchFET power MOSFET are available now, with lead times of 12 to 14 weeks for larger orders. Follow MICRO FOOT power MOSFETs from Vishay at http://twitter.com/vishayindust.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

MICRO FOOT is a registered trademark of Siliconix incorporated.

Link to datasheets:
http://www.vishay.com/doc?62652 (Si8806DB)
http://www.vishay.com/doc?63682 (Si8812DB)
http://www.vishay.com/doc?62759 (Si8817DB)
http://www.vishay.com/doc?62752 (Si8489EDB)

Link to product photo:
http://www.flickr.com/photos/vishay/8222508110

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