Previous Close | 13.03 |
Open | 13.15 |
Bid | 13.27 x 0 |
Ask | 13.28 x 0 |
Day's Range | 13.08 - 13.29 |
52 Week Range | 10.45 - 23.61 |
Volume | |
Avg. Volume | 36,608,670 |
Market Cap | 66.204B |
Beta (5Y Monthly) | N/A |
PE Ratio (TTM) | N/A |
EPS (TTM) | -0.04 |
Earnings Date | N/A |
Forward Dividend & Yield | 0.05 (0.38%) |
Ex-Dividend Date | Jul 05, 2023 |
1y Target Est | 15.44 |
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On February 26, 2024, at the Mobile World Congress ("MWC") 2024, the largest worldwide telecommunications event, was held in Barcelona. Leading global companies in telecommunications and related supply chain manufacturers gathered together to showcase cutting-edge technologies in mobile handset and internet-of-things ("IoT") communications and conduct in-depth technical keynote speeches among the international audience. As a full turn-key RF front end solutions provider, Sanan IC attends MWC for
STMicroelectronics N.V. (NYSE: STM) collaborated with Sanan Optoelectronics to create a new 200mm silicon carbide device manufacturing JV in Chongqing, China. The new SiC fab will likely start production in Q4 2025 and full buildout by 2028, supporting the rising demand in China for car electrification and industrial power and energy applications. Correspondingly, Sanan Optoelectronics will build and operate separately a new 200mm SiC substrate manufacturing facility to fulfill the JV's needs, u
STMicroelectronics (STM), Europe's second-largest chip maker by revenue, and Chinese firm Sanan Optoelectronics on Wednesday said they have agreed to form a US$3.2 billion semiconductor joint venture in the southwestern city of Chongqing, supporting rising domestic demand for silicon carbide (SiC) devices in the electric vehicle, industrial power and energy sectors. The deal involves the creation of a new 200mm SiC device manufacturing operation that will start production in the fourth quarter o