U.S. markets close in 1 hour 22 minutes

II-VI Incorporated (IIVI)

NasdaqGS - NasdaqGS Real Time Price. Currency in USD
Add to watchlist
81.37-0.30 (-0.37%)
As of 2:38PM EDT. Market open.
Full screen
Trade prices are not sourced from all markets
Gain actionable insight from technical analysis on financial instruments, to help optimize your trading strategies
Chart Events
Bullishpattern detected
Price Crosses Moving Average

Price Crosses Moving Average

Previous Close81.67
Open81.98
Bid81.39 x 900
Ask81.44 x 1000
Day's Range80.69 - 82.51
52 Week Range27.02 - 100.44
Volume939,878
Avg. Volume2,107,306
Market Cap8.53B
Beta (5Y Monthly)1.55
PE Ratio (TTM)45.38
EPS (TTM)1.79
Earnings DateMay 10, 2021 - May 14, 2021
Forward Dividend & YieldN/A (N/A)
Ex-Dividend DateN/A
1y Target Est105.76
Fair Value is the appropriate price for the shares of a company, based on its earnings and growth rate also interpreted as when P/E Ratio = Growth Rate. Estimated return represents the projected annual return you might expect after purchasing shares in the company and holding them over the default time horizon of 5 years, based on the EPS growth rate that we have projected.
Fair Value
XX.XX
Overvalued
Research that delivers an independent perspective, consistent methodology and actionable insight
Related Research
View more
  • ABB's Q1 Financial Result Update Shows Y/Y Rise in Revenues
    Zacks

    ABB's Q1 Financial Result Update Shows Y/Y Rise in Revenues

    ABB provides preliminary data for the first-quarter 2021 results and updates its revenue guidance for 2021.

  • II-VI Incorporated's (IIVI) Shares March Higher, Can It Continue?
    Zacks

    II-VI Incorporated's (IIVI) Shares March Higher, Can It Continue?

    As of late, it has definitely been a great time to be an investor in II-VI Incorporated (IIVI).

  • II-VI Incorporated Expands Silicon Carbide Manufacturing Footprint for Power Electronics in Electric Vehicles and Clean Energy Applications
    GlobeNewswire

    II-VI Incorporated Expands Silicon Carbide Manufacturing Footprint for Power Electronics in Electric Vehicles and Clean Energy Applications

    PITTSBURGH, April 15, 2021 (GLOBE NEWSWIRE) -- II‐VI Incorporated (Nasdaq: IIVI), a leader in wide-bandgap compound semiconductors, today announced that it has expanded its silicon carbide (SiC) wafer finishing manufacturing footprint in China to serve the largest worldwide market for electric vehicles (EVs) and for clean energy applications. Spurred by increasing regulatory requirements for lower emissions of greenhouse gases and the decreasing cost of lithium-ion batteries, the market for EVs is growing rapidly and driving the demand for power electronics that are based on silicon carbide, a wide-bandgap material that increases the driving range of EVs by about 10% on a single charge, compared with power electronics based on silicon. To meet the market demand in Asia, II-VI has established a backend processing line for conductive SiC substrates, in over 50,000 sq. ft. of new cleanroom space, at II-VI’s Asia Regional Headquarters in Fuzhou, China. “According to recent industry reports, China is expected to continue to be the world’s largest electric car market at over 40% of global sales,” said Sohail Khan, Executive Vice President, New Ventures & Wide-Bandgap Electronics Technologies Business Unit. “We are planning to substantially increase our global production capacity for SiC boules and substrates in the U.S. over the next 5 to 10 years to address the accelerating power electronics market, including for electric vehicles and clean energy applications. These investments will be supported by our global sales force and a SiC platform built by our innovations of the last 20 years, including the world’s first 200 mm conductive substrates in 2015. We are excited about our prospects to lead in one of the most promising markets of our generation.” In addition to EVs, power electronics based on SiC enable high efficiency in inverters for solar and wind energy generation, as well as in smart-grid power switching, due to reduced switching losses, high power density, better heat dissipation, and increased bandwidth capability, compared with existing devices based on silicon. The backend SiC wafer processing performed at II-VI’s new SiC facility in Fuzhou includes edge grinding, chemical-mechanical polishing, cleaning, and inspection, all performed in Class 100 and 1000 cleanrooms. The facility is part of II-VI’s already announced plan to ramp its SiC substrate manufacturing capacity by five to ten times over five years, including with 200 mm diameter substrates. II-VI maintains a large manufacturing operations and product development presence in China in the cities of Fuzhou, Guangzhou, Shanghai, Shenzhen, Suzhou, and Wuxi. About II-VI Incorporated II-VI Incorporated, a global leader in engineered materials and optoelectronic components, is a vertically integrated manufacturing company that develops innovative products for diversified applications in communications, materials processing, aerospace & defense, semiconductor capital equipment, life sciences, consumer electronics, and automotive markets. Headquartered in Saxonburg, Pennsylvania, the Company has research and development, manufacturing, sales, service, and distribution facilities worldwide. The Company produces a wide variety of application-specific photonic and electronic materials and components, and deploys them in various forms, including integrated with advanced software to support our customers. For more information, please visit us at www.ii-vi.com. CONTACT: Mark Lourie Vice President, Corporate Communications corporate.communications@ii-vi.com www.ii-vi.com/contact-us